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| 2SC4140 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4140 500 400 10 18(Pulse36) 6 130(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=10A IC=10A, IB=2A IC=10A, IB=2A VCE=12V, IE=-2.0A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 165typ (Ta=25C) 2SC4140 Unit A A V V MHz pF 20.0min 19.90.3 4.0 a b o3.20.1 4.0max V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 20 IC (A) 10 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 1 IB2 (A) -2 ton (s) 1max tstg (s) 3max tf (s) 0.5max 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 18 16 VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) (I C/ IB=5) 1.4 I C - V BE Temperature Characteristics (Typical) 18 16 (VCE=4V) 1 .6 A 1.2 A Collector Current I C (A) 800 mA 1 -55C (Case 25C (Cas Temp) Collector Current I C (A) V B E( sat) 12 600mA 400m A 12 e Temp) Temp ) mp ) mp) e Te -55C Te 8 8 eT em p) 25 C (Ca (Cas 25C as IB=100mA 12 5 C (C 4 4 VCE(sat) 0 0.02 0.05 0.1 0.5 1 5 - 55 C 0 0 1 2 3 4 10 18 0 0 0.2 0.4 0.6 125 C 200mA 0.8 (Cas 125C se (Case e Te mp) 1.0 1.2 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 10 j - a( C /W) h FE - IC Characteristics (Typical) ton*t s t g*t f( s) t on *t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 2 125C DC C urrent G ain h FE 5 VCC 200V IC:I B 1: -I B2= 10:1:2 Transient Thermal Resistance tstg 25C 1 -55C Sw it ching Time 1 0.5 ton 0.5 10 tf 0.1 0.2 0.5 1 5 10 18 5 0.02 0.05 0.1 0.5 1 5 10 18 0.1 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 50 10 ms Reverse Bias Safe Operating Area 50 130 P c - T a Derating 1m 10 s 0 s 10 Collector Cur rent I C( A) 5 DC Collector Curr ent I C (A) 10 5 Ma xim um Powe r Dissipat io n P C( W) 100 W ith In fin ite he at 1 0.5 Without Heatsink Natural Cooling 0.1 0.05 0.03 5 10 50 100 500 1 0.5 Without Heatsink Natural Cooling L=3mH IB2=-0.5A Duty:less than 1% si nk 50 0.1 0.05 0.03 5 10 50 100 500 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 92 |
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